PART |
Description |
Maker |
M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5279-25 M5M5279-35 M5M5279-35L M5M5279J-20 M5M5 |
294912-BIT (32768-WORD BY 9-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CXK5V8257BM CXK5V8257BM-10LL CXK5V8257BM-70LL CXK5 |
32768-word X 8-bit High Speed CMOS Static RAM 32768字8位高速CMOS静态RAM
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Sony, Corp. SONY[Sony Corporation] http://
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TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
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M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch From old datasheet system 524288-BIT CMOS STATIC RAM 524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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HN27C256FP HN27C256FP-25T HN27C256FP-30T |
32768 WORD X 8 BIT CMOS ONE TIME ELECTICALLY PROGRAMMABLE ROM 32768字8位CMOS一次性可编程ROM ELECTICALLY N/A
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
HN27256G-25 |
32768-word x 8-Bit UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
HN58C256ASERIES 58C256A |
32768-word ′ 8-bit Electrically Erasable and From old datasheet system
|
hitachi
|
MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
TC55329P |
32768 x 9-Bit CMOS SRAM
|
Toshiba
|